IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 11

• Manufacturer Part Number: IKW15N120T2
• Description: IGBT 1200V 30A 235W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW15N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 235W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 235W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
20A
15A
10A
Figure 23. Typical reverse recovery time as
Figure 25. Typical reverse recovery current
5A
0A
600ns
500ns
400ns
300ns
200ns
100ns
0ns
di
di
400A/µs
a function of diode current slope
(V
Dynamic test circuit in Figure E)
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
F
F
/dt,
/dt,
R
R
=600V, I
=600V, I
400A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
F
F
=15A,
=15A,
800A/µs
800A/µs
T
J
=175°C
T
J
T
=25°C
1200A/µs
T
J
=175°C
1200A/µs
J
=25°C
TrenchStop
11
Figure 24. Typical reverse recovery charge
Figure 26. Typical diode peak rate of fall of
3µC
2µC
1µC
0µC
-600A/µs
-500A/µs
-400A/µs
-300A/µs
-200A/µs
-100A/µs
®
-0A/µs
2
nd
generation Series
di
di
as a function of diode current
slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
400A/µs
F
F
/dt,
R
/dt,
R
=600V, I
=600V, I
400A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
IKW15N120T2
F
F
=15A,
=15A,
800A/µs
800A/µs
T
Rev. 2.1
J
=25°C
T
J
T
=175°C
J
=25°C
1200A/µs
T
J
1200A/µs
=175°C
Sep 08