IKW15N120T2 Infineon Technologies, IKW15N120T2 Datasheet - Page 4

• Manufacturer Part Number: IKW15N120T2
• Description: IGBT 1200V 30A 235W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW15N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 235W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 15A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 235W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 30.0 A
• Ic(max) @ 100°: 15.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t
1)
Power Semiconductors
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
b
t
t
t
t
E
E
E
t
Q
I
d i
Symbol
d ( o n )
r
d ( o f f )
f
r r
r r m
o n
o f f
t s
r r
r r
/ d t
TrenchStop
j
=175 C
4
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
d i
j
j
C C
G E
R
G
= 175 C
= 175 C
F
1 )
1 )
= 60 0 V , I
= 4 1 .8 ,
/d t= 460A/ s
= 60 0 V, I
= 0 /1 5 V,
=3 15nH,
=34pF
Conditions
®
2
nd
F
C
=15A,
=15A,
generation Series
min.
IKW15N120T2
-
-
-
-
-
-
-
-
-
-
-
Value
2.65
typ.
450
176
460
123
1.5
1.3
2.8
31
30
13
Rev. 2.1
max.
-
-
-
-
-
-
-
-
-
-
Sep 08
Unit
ns
mJ
ns
µC
A
A/ s