FGH40N6S2D Fairchild Semiconductor, FGH40N6S2D Datasheet
FGH40N6S2D
Specifications of FGH40N6S2D
FGH40N6S2D_NL
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FGH40N6S2D Summary of contents
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... FGH40N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth General Description The FGH40N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive ...
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... N/A 30 Min Typ Max Units 600 - - 250 2 ±250 nA - 1.9 2 1.7 2 2.2 2 3.5 4.3 5 6.5 8 100 - - 115 - J - 200 - J - 195 260 105 ns - 115 - J - 380 450 J - 375 600 0.43 °C 1.25 °C/W is the turn-on loss ON1 = 0A). All devices were tested per CE FGH40N6S2D RevA3 J ...
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... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE =15V 150 125 J 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2 COLLECTOR TO EMITTER VOLTAGE (V) CE FGH40N6S2D RevA3 700 500 450 400 350 300 250 ...
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... L = 200 390V 125 10V 15V 10V COLLECTOR TO EMITTER CURRENT (A) CE Emitter Current = 200 390V 125 10V 125 COLLECTOR TO EMITTER CURRENT (A) CE Emitter Current = 200 390V 125 10V 10V COLLECTOR TO EMITTER CURRENT (A) CE Current FGH40N6S2D RevA3 = 15V 35 40 =15V 15V = 15V 35 40 ...
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... Figure 18. Collector to Emitter On-State Voltage vs = 1mA 600V 400V 200V GATE CHARGE (nC) G Figure 14. Gate Charge o = 125 200 390V 15V TOTAL ON2 OFF I = 40A 20A 10A CE 10 100 R , GATE RESISTANCE ( ) G Resistance I = 40A 20A 10A GATE TO EMITTER VOLTAGE (V) GE Gate to Emitter Voltage FGH40N6S2D RevA3 30 35 1000 15 16 ...
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... 20A EC o 125 10A 20A 10A EC 300 400 500 600 700 800 900 dI /dt, RATE OF CHANGE OF CURRENT ( Current o = 390V 125 20A 10A EC 300 400 500 600 700 800 900 dI /dt, CURRENT RATE OF CHANGE ( Rate of Change of Current FGH40N6S2D RevA3 1000 1000 ...
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... Test Circuit and Waveforms L = 200 FGH40N6S2D Figure 26. Inductive Switching Test Circuit ©2002 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted RECTANGULAR PULSE DURATION (s) 1 FGH40N6S2D DIODE TA49391 390V DD - Figure 27. Switching Test Waveforms DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FGH40N6S2D RevA3 1 10 ...
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... E collector current equals zero (I ECCOSORBD is a Trademark of Emerson and Cumming, Inc. ) plots are CE = 0.05/( d(OFF)I d(ON)I and t are d(OFF)I d(ON important JM d(OFF )/( OFF ON2 ) is defined 50 )/ the integral of ON2 during turn i.e., the OFF = 0) CE FGH40N6S2D RevA3 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ FRFET™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...