SGR20N40LTF Fairchild Semiconductor, SGR20N40LTF Datasheet - Page 3

• Manufacturer Part Number: SGR20N40LTF
• Description: IGBT TRENCH 400V 150A DPAK
• Manufacturer: Fairchild Semiconductor

Specifications of SGR20N40LTF

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce(on) (max) @ Vge, Ic: 8V @ 4.5V, 150A
• Power - Max: 45W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

©2001 Fairchild Semiconductor Corporation
Fig 3. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 5. Saturation Voltage vs. V
200
150
100
50
20
16
12
20
16
12
8
4
0
0
8
4
0
0
0
0
Common Emitter
T
Common Emitter
T
Common Emitter
T
C
C
C
= 25℃
= -40℃
= 125℃
1
1
Collector-Emitter Voltage, V
Gate-Emitter Voltage, V
Gate-Emitter Voltage, V
2
2
2
4
3
3
I
I
C
C
= 70A
= 70A
100A
4
4
GE
GE
GE
GE
100A
150A
[V]
[V]
CE
6
[V]
V
5
5
GE
150A
= 2.5V
3.5V
3.0V
4.5V
4.0V
5.0V
8
6
6
10000
Fig 4. Saturation Voltage vs. V
Fig 2. Saturation Voltage vs. Case
Fig 6. Capacitance Characteristics
1000
100
20
16
12
10
7
6
5
4
3
2
8
4
0
-50
0
0
Common Emitter
T
Common Emitter
V
C
GE
= 25℃
Temperature at Variant Current Level
= 4.5V
1
Collector-Emitter Voltage, V
10
Gate-Emitter Voltage, V
0
Case Temperature, T
2
Cres
Cies
Coes
50
20
3
I
C
= 70A
150A
100A
C
4
GE
[ ℃ ]
GE
Common Emitter
V
T
SGR20N40L / SGU20N40L Rev. A1
CE
GE
C
[V]
100
150A
30
= 25℃
= 0V, f = 1MHz
[V]
5
I
C
= 70A
100A
150
40
6