HGT1S7N60A4DS Fairchild Semiconductor, HGT1S7N60A4DS Datasheet
HGT1S7N60A4DS
Specifications of HGT1S7N60A4DS
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HGT1S7N60A4DS Summary of contents
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... SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... D 1 -55 to 150 J STG 300 L 260 PKG MIN TYP 600 - 125 1 125 C - 1.6 J 4.5 5 15V 15V - 20V - 100 - 120 - 125 130 - 200 - 125 HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 UNITS MAX UNITS - V 250 2 250 150 150 215 J 170 J ...
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... IGBT. The diode type is specified 150 15V 100 100 200 300 400 V , COLLECTOR TO EMITTER VOLTAGE ( 390V 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1 MAX UNITS - 1.0 C/W o 2.2 C/W ON2 500 600 700 140 o C 120 100 ...
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... PULSE DURATION = 250 125 150 0.5 1.0 1 COLLECTOR TO EMITTER VOLTAGE ( 1mH 390V 125 12V OR 15V COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 1mH 390V 12V 125 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev 2.0 2.5 3.0 = 12V OR 15V 15V = 12V 15V ...
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... 125 COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA G(REF 600V 400V 200V GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 1mH 390V TOTAL ON2 OFF I = 14A 3.5A CE 0.1 10 100 R , GATE RESISTANCE ( ) G HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev 12V OR 15V = 12V OR 15V 15V 1000 ...
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... PULSE DURATION = 250 s 2.6 2 14A 3. GATE TO EMITTER VOLTAGE ( GATE TO EMITTER VOLTAGE dI /dt = 200A FORWARD CURRENT ( 390V CE 0 100 200 300 400 di /dt, RATE OF CHANGE OF CURRENT ( CURRENT HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev 125 125 125 125 125 3. 3.5A EC 500 600 700 ...
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... Test Circuit and Waveforms L = 1mH FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2005 Fairchild Semiconductor Corporation Unless Otherwise Specified (Continued RECTANGULAR PULSE DURATION (s) 1 HGTG7N60A4D DUT + 390V DUTY FACTOR PEAK 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev ...
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... A 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the ON2 during turn-on and during turn-off. All tail losses are included in the ; i.e., the collector current equals zero OFF HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev d(OFF)I ). The ON2 - T )/ ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...