U1898_D27Z Fairchild Semiconductor, U1898_D27Z Datasheet

U1898_D27Z

Manufacturer Part Number

U1898_D27Z

Description

TRANS SW N-CH 40V 50MA TO-92

Manufacturer

Fairchild Semiconductor

Datasheet

1.U1898_D27Z.pdf (3 pages)

Specifications of U1898_D27Z

Current - Drain (idss) @ Vds (vgs=0)

15mA @ 20V

Fet Type

N-Channel

Voltage - Breakdown (v(br)gss)

40V

Voltage - Cutoff (vgs Off) @ Id

2V @ 1nA

Input Capacitance (ciss) @ Vds

16pF @ 20V

Resistance - Rds(on)

50 Ohm

Mounting Type

Through Hole

Package / Case

TO-92-3 (Standard Body), TO-226

Power - Max

625mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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N-Channel Switch

• This device is designed for low level analog switching, sample and

• Sourced from Process 51.

• See J111 for characteristics.

Absolute Maximum Ratings*

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These rating are based on a maximum junction temperature of 150 degrees C.

2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Electrical Characteristics

* Pulse Test: Pulse Width

Thermal Characteristics

Off Characteristics

On Characteristics

Small Signal Characteristics

Switching Characteristics

DGO

DSS

off

DS(on)

ds(on)

hold circuits and chopper stabalized amplifiers.

Symbol

(BR)GS

GS(off)

iss

rss

Symbol

, T

Symbol

STG

Gate-Source Breakdown Voltage

Gate-Source Cutoff Voltage

Drain-Gate Leakage Current

Zero-Gate Voltage Drain Current *

Drain-Source On Resistance

Input Capacitance

Reverse Transfer Capacitance

Turn-On Time

Turn-Off Time

Total Device Dissipation

Derate above 25 C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

300 s, Duty Cycle

Parameter

2.0%

Parameter

=25 C unless otherwise noted

Parameter

=25 C unless otherwise noted

U1898

D(on)

GS(off)

= 1.0 A, V

= 1.0 mA, V

= 20 V, I

= 20 V, V

= VGS = 0, f= 1.0 kHz

= 20, V

= - 20 V, f = 1.0 MHz

= 20 V, I

= 6.0 mA

= 6.0 V

Test Condition

= 1.0 nA

= 0

= 0, f = 1.0 MHz

= 0

Max.

625

125

357

5.0

1. Drain 2. Source 3. Gate

-55 ~ 150

Ratings

-40

Min.

-2.0

-40

TO-92

Max.

-200

-7.0

5.0

mW/ C

Units

C/W

Units

Rev. A, April 2004

Units

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U1898_D27Z Summary of contents

Page 1

... Pulse Test: Pulse Width 300 s, Duty Cycle Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2004 Fairchild Semiconductor Corporation U1898 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2004 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, April 2004 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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