MMBFJ271 Fairchild Semiconductor, MMBFJ271 Datasheet
MMBFJ271
Manufacturer Part Number
MMBFJ271
Description
IC SWITCH P-CHANNEL SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.MMBFJ271.pdf
(3 pages)
Specifications of MMBFJ271
Current - Drain (idss) @ Vds (vgs=0)
6mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
1.5V @ 1nA
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Maximum Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Power Dissipation Pd
225mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Reel Quantity
3000
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMBFJ271
Manufacturer:
ON/安森美
Quantity:
20 000
©2006 Fairchild Semiconductor Corporation
MMBFJ271 Rev. A
MMBFJ271
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
• Sourced from process 88.
Absolute Maximum Ratings *
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
- These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
Off Characteristics
On Characteristics
Note3 : Short duration test pulse used to minimize self-heating effect
V
V
I
T
P
R
V
I
V
I
gfs
goss
GF
GSS
DSS
J
DG
GS
D
(BR)GSS
GS(off)
Symbol
Symbol
θJA
Symbol
circuits and chopper stabilized amplifiers.
, T
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conduc-
tance
(Note3)
(Note3)
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
T
a
= 25°C unless otherwise noted
.
I
V
V
V
V
V
G
GS
DS
DS
GS
GS
= 1.0µA, V
= 20V, V
= -15V, I
= 0V, V
= -15V, V
= 0V, V
Test Condition
DS
DS
1
DS
DS
D
GS
= 15V, f = 1.0kHz
= 15V, f = 1.0kHz
= -1.0nA
= 0
= 0
= 0
-55 ~ 150
Value
Value
225
556
-30
1.8
30
50
MIN
8000
-6.0
1.5
30
G
Mark : 62T
SOT-23
MAX
18000
200
500
4.5
-50
D
June 2006
mW/°C
Units
Units
www.fairchildsemi.com
°C/W
S
mW
mA
°C
V
V
Units
µmhos
µmhos
mA
pA
V
V
tm
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MMBFJ271 Summary of contents
Page 1
... Zero-Gate Voltage Drain Current * DSS gfs Forward Transferconductance goss Common- Source Output Conduc- tance Note3 : Short duration test pulse used to minimize self-heating effect ©2006 Fairchild Semiconductor Corporation MMBFJ271 Rev 25°C unless otherwise noted a Parameter Parameter T = 25°C unless otherwise noted C Test Condition I = 1.0µ ...
Page 2
... Package Dimensions 0.40 ±0.03 0.95 MMBFJ271 Rev. A SOT-23 ±0.03 0.40 0.96~1.14 ±0.10 2.90 ±0.03 ±0.03 0.95 1.90 ±0.03 0.508REF 2 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...
Page 3
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete MMBFJ271 Rev. A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ QFET MicroPak™ ...