MMBFJ270 Fairchild Semiconductor, MMBFJ270 Datasheet

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MMBFJ270

Manufacturer Part Number
MMBFJ270
Description
IC SWITCH P-CHANNEL SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBFJ270

Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
500mV @ 1nA
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Power - Max
225mW
Configuration
Single
Transistor Polarity
P-Channel
Power Dissipation
225 mW
Gate-source Breakdown Voltage
30 V
Gate-source Cutoff Voltage
2 V
Drain Current (idss At Vgs=0)
1.5 mA to 20 mA
Forward Transconductance Gfs (max / Min)
6 S to 15 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 30 V
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Power Dissipation Pd
225mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Leaded Process Compatible
Yes
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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© 2008 Fairchild Semiconductor Corporation
MMBFJ270 Rev. B
MMBFJ270
P-Channel Switch
Features
• This device is designed for low level analog switching sample and hold
• Sourced from process 88.
Absolute Maximum Ratings
Note1 : These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Note2 : Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Electrical Characteristics
Off Characteristics
On Characteristics
Note3 : Short duration test pulse used to minimize self-heating effect
V
V
I
T
P
R
V
I
V
I
gfs
goss
GF
GSS
DSS
J
DG
GS
D
(BR)GSS
GS(off)
Symbol
Symbol
θJA
Symbol
circuits and chopper stabilized amplifiers.
, T
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
STG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conduc-
tance
(Note3)
(Note3)
Parameter
Parameter
Parameter
T
C
= 25°C unless otherwise noted
(Note1)
.
I
V
V
V
V
V
G
T
GS
DS
DS
GS
GS
a
= 1.0µA, V
= 25°C unless otherwise noted
= 20V, V
= -15V, I
= 0V, V
= -15V, V
= 0V, V
(Note2)
Test Condition
DS
DS
1
DS
DS
D
GS
= 15V, f = 1.0kHz
= 15V, f = 1.0kHz
= -1.0nA
= 0
= 0
= 0
-55 ~ 150
Value
Value
225
556
-30
1.8
30
50
MIN
6000
-2.0
0.5
30
G
Mark : 61S
SOT-23
MAX
15000
200
200
2.0
-15
D
mW/°C
Units
Units
www.fairchildsemi.com
°C/W
August 2008
S
mW
mA
°C
V
V
Units
µmhos
µmhos
mA
pA
V
V

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MMBFJ270 Summary of contents

Page 1

... Zero-Gate Voltage Drain Current * DSS gfs Forward Transferconductance goss Common- Source Output Conduc- tance Note3 : Short duration test pulse used to minimize self-heating effect © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B (Note1 25°C unless otherwise noted a Parameter Parameter (Note2 25°C unless otherwise noted ...

Page 2

... GATE-SOURCE VOLTAGE (V) GS Normalized Drain Resistance vs Bias Voltage 100 V @ 5.0V GS(off ________ GS(off 0.2 0 NORMALIZED GATE-SOURCE VOLTAGE (V) GS GS(off) © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B 100 50 0 2.0 V 3.5 V 3 2.5 V GS(off 55°C 25°C 125° 1000 100 10 ...

Page 3

... 6 Hz, 100 ≥ 1.0 kHz 1 0.01 0 FREQUENCY (kHz) Power Derating 300 250 200 150 100 Tc[ C], CASE TEMPERATURE © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B (Continued) 100 V = 6.0V GS(off) - 55°C 10 25°C 125° 100 0 1000 500 100 100 100 ...

Page 4

... Package Dimensions ±0.03 0.40 0.95 © 2008 Fairchild Semiconductor Corporation MMBFJ270 Rev. B SOT-23 ±0.03 0.40 0.96~1.14 ±0.10 2.90 ±0.03 0.95 ±0.03 ±0.03 1.90 0.508REF 4 0.03~0.10 0.38 REF +0.05 0.12 –0.023 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Fairchild Semiconductor Corporation MMBFJ270 Rev. B www.fairchildsemi.com 5 ...

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