J270 Fairchild Semiconductor, J270 Datasheet

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J270

Manufacturer Part Number
J270
Description
IC SWITCH P-CHAN 30V 50MA TO-92
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of J270

Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
500mV @ 1nA
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
350mW
Configuration
Single
Transistor Polarity
P-Channel
Power Dissipation
350 mW
Gate-source Breakdown Voltage
30 V
Gate-source Cutoff Voltage
2 V
Drain Current (idss At Vgs=0)
2 mA to 25 mA
Forward Transconductance Gfs (max / Min)
0.006 S to 0.015 S
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Breakdown Voltage Vbr
-30V
Gate-source Cutoff Voltage Vgs(off) Max
-2V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Current Rating
-15A
Rohs Compliant
Yes
Transistor Type
JFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2003 Fairchild Semiconductor Corporation
P-Channel Switch
• This device is designed for low level analog switching sample and hold
• Sourced from process 88.
Absolute Maximum Ratings*
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
Thermal Characteristics
V
V
I
T
Off Characteristics
V
I
V
On Characteristics
I
Small Signal Characteristics
gfs
goss
P
R
R
GF
GSS
DSS
circuits and chopper stabilized amplifiers.
Symbol
J
DG
GS
(BR)GSS
GS(off)
D
Symbol
, T
JC
JA
Symbol
STG
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
Zero-Gate Voltage Drain Current *
Forward Transferconductance
Common- Source Output Conductance
Total Device Dissipation
Derate above 25 C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
Parameter
Parameter
T
A
T
=25 C unless otherwise noted
a
=25 C unless otherwise noted
Parameter
T
a
=25 C unless otherwise noted
J270
I
V
V
V
V
V
G
GS
DS
DS
GS
GS
= -1.0 A, V
= -20V, V
= -15V, I
= -15V, V
= 0V, V
= 0V, V
Test Condition
DS
DS
D
DS
DS
GS
= 1.0nA
= 15V, f = 1.0kHz
= 15V, f = 1.0kHz
= 0
= 0
= 0
Max.
350
125
357
2.8
1. Drain 2. Gate 3. Source
1
-55 ~ 150
Ratings
-30
30
50
6000
Min.
-2.0
0.5
30
TO-92
15000
Max.
200
200
2.0
-15
mW/ C
Units
mW
C/W
C/W
Units
mA
V
V
Rev. A, July 2003
C
Units
mhos
mhos
mA
pA
V
V

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J270 Summary of contents

Page 1

... Forward Transferconductance goss Common- Source Output Conductance Thermal Characteristics Symbol P Total Device Dissipation D Derate above Thermal Resistance, Junction to Case JC R Thermal Resistance, Junction to Ambient JA ©2003 Fairchild Semiconductor Corporation J270 T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition -20V, V ...

Page 2

... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2003 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. A, July 2003 ...

Page 3

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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