FDMA1028NZ Fairchild Semiconductor, FDMA1028NZ Datasheet - Page 4

IC MOSFET N-CH DUAL MICROFET 2X2

FDMA1028NZ

Manufacturer Part Number
FDMA1028NZ
Description
IC MOSFET N-CH DUAL MICROFET 2X2
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMA1028NZ

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
68 mOhm @ 3.7A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.7A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 4.5V
Input Capacitance (ciss) @ Vds
340pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.068 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
16 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.7 A
Power Dissipation
1400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMA1028NZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMA1028NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
31 388
Part Number:
FDMA1028NZ
Manufacturer:
FSC
Quantity:
3 507
Part Number:
FDMA1028NZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
6
5
4
3
2
1
0
6
5
4
3
2
1
0
1.6
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0.5
0
1
Figure 3. On-Resistance Variation with
V
-50
Figure 1. On-Region Characteristics.
GS
3.5V
Figure 5. Transfer Characteristics.
V
= 4.5V
DS
V
I
GS
D
= 5V
0.2
= 3.7A
-25
= 4.5V
V
3.0V
V
GS
1
DS
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, DRAIN-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
T
Temperature.
0.4
A
= 125
2.5V
25
o
C
0.6
1.5
50
2.0V
25
o
75
C
-55
0.8
o
C
100
o
2
C)
1
125
1.5V
150
2.5
1.2
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.13
0.11
0.09
0.07
0.05
0.03
0.01
100
0.1
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
0
0
0
V
Drain Current and Gate Voltage.
T
GS
A
V
= 25
= 0V
GS
T
Gate-to-Source Voltage.
= 2.0V
A
0.2
o
V
C
= 125
1
SD
2.5V
2
V
, BODY DIODE FORWARD VOLTAGE (V)
GS
o
, GATE TO SOURCE VOLTAGE (V)
C
0.4
I
2
D
T
, DRAIN CURRENT (A)
3.0V
A
= 125
4
25
o
C
o
C
0.6
3
3.5V
-55
6
o
C
0.8
4
4.0V
FDMA1028NZ Rev B6
8
I
1
D
5
= 1.85A
4.5V
10
1.2
6

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