FDMA1024NZ Fairchild Semiconductor, FDMA1024NZ Datasheet - Page 4

• Manufacturer Part Number: FDMA1024NZ
• Description: MOSFET N-CH DUAL 20V 6-MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA1024NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 500pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.054 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 5 A
• Power Dissipation: 1400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA1024NZTR

©2010 Fairchild Semiconductor Corporation
FDMA1024NZ Rev.B4
Typical Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
-75
Figure 3. Normalized On- Resistance
0.0
0.0
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Figure 1.
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
V
I
-50
D
GS
DS
= 5 A
vs Junction Temperature
= 4.5 V
= 5 V
0.2
-25
T
V
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
J
DS
0.5
GS
On-Region Characteristics
,
JUNCTION TEMPERATURE
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
0
T
0.4
J
= 125
25
V
V
V
V
GS
GS
GS
GS
µ
1.0
s
o
= 4.5 V
= 2.5 V
= 3.5 V
= 1.8 V
C
50
T
0.6
J
= 25 °C unless otherwise noted
µ
75
s
T
J
= -55
1.5
100 125 150
(
o
0.8
C
V
)
T
o
GS
C
J
= 25
= 1.5 V
o
C
1.0
2.0
4
200
160
120
1E-3
0.01
80
40
3.0
2.5
2.0
1.5
1.0
0.5
0.1
Figure 2.
Figure 4.
10
0
Forward Voltage vs Source Current
1.0
1
Figure 6.
vs Drain Current and Gate Voltage
0.0
1
V
1.5
GS
V
0.2
SD
= 0 V
Normalized On-Resistance
On-Resistance vs Gate to
V
, BODY DIODE FORWARD VOLTAGE (V)
2
T
GS
Source Voltage
Source to Drain Diode
J
I
,
D
2.0
= 125
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
o
C
V
2.5
GS
3
= 1.5 V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
I
0.6
D
V
= 2.5 A
GS
3.0
T
J
= 3.5 V
= -55
4
T
T
T
J
J
J
= 25
0.8
= 125
= 25
µ
3.5
o
s
C
o
o
C
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o
C
V
C
V
V
5
GS
GS
GS
1.0
4.0
= 4.5 V
= 2.5 V
= 1.8 V
µ
s
4.5
1.2
6