FDS6930B Fairchild Semiconductor, FDS6930B Datasheet
FDS6930B
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FDS6930B Summary of contents
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... R Thermal Resistance, Junction-to-Case θJC Package Marking and Ordering Information Device Marking FDS6930B ©2010 Fairchild Semiconductor Corporation FDS6930B Rev. A2 General Description = 10 V These N-Channel Logic Level MOSFETs are produced using GS = 4.5 V Fairchild Semiconductor’s advanced PowerTrench process that GS has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. Trr parameter will not be subjected to 100% production testing. FDS6930B Rev 25°C unless otherwise noted A Test Conditions = 250 µ 250 µA, Referenced to 25 °C ...
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... T , JUNCTION TEMPERATURE ( J Figure 3. On-Resistance Variation with Temperature 125° GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS6930B Rev. A2 4.0V 1.8 3.5V 1.6 1.4 1.2 3.0V 0.8 1 1.5 2 0.12 0.1 0.08 0.06 0.04 0.02 75 100 125 150 o C) 100 10 0.1 -55°C ...
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... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6930B Rev. A2 500 400 = 5V 15V 300 10V 200 100 100µs ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower F-PFS ® Auto-SPM FRFET Build it Now Global Power Resource CorePLUS Green FPS CorePOWER Green FPS ...