FDS4953 Fairchild Semiconductor, FDS4953 Datasheet

FDS4953

Manufacturer Part Number

FDS4953

Description

MOSFET P-CH DUAL 30V 5A 8SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS4953.pdf (5 pages)

Specifications of FDS4953

Fet Type

2 P-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

55 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

9nC @ 5V

Input Capacitance (ciss) @ Vds

528pF @ 15V

Power - Max

900mW

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Dual Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.055 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

10 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

5 A

Power Dissipation

2000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Module Configuration

Dual

Continuous Drain Current Id

-5A

Drain Source Voltage Vds

-30V

On Resistance Rds(on)

46mohm

Rds(on) Test Voltage Vgs

-10V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS4953

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Final PCN Q3073705 is an addendum for Final PCN Q1070805.

This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Kalabkova, Ivana

E-mail: Ivana.Kalabkova@notes.fairchildsemi.com

Phone: 408-822-2187

Implementation of change:

Expected 1st Device Shipment Date: 2007/12/10

Earliest Year/Work Week of Changed Product: 0750

Change Type Description: Bond Wire Material Composition

Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.

Products will be shipped for an interim period of time with Au wire until the inventory is

depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949

certified.

Qual/REL Plan Numbers : Q20070231

Qualification :

This change will have no impact on any of the electrical parameters of the products

involved. The product test conditions, test limits and performance will remain

unchanged. Products will be built with the same level of quality and reliability as with

the existing products. The devices for qualification and qualification requirements are

defined in the table below.

Results/Discussion

Test: (Autoclave)

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: Rivero, Douglas

E-mail: Doug.Rivero@fairchildsemi.com

Phone: 1-408-822-2143

Date Issued On : 2007/10/12

Date Created : 2007/09/11

PCN# : Q3073705

Pg. 1

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FDS4953 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

Page 3

... FDS6990A_NL FDS8813NZ FDS8958A_NF40 FDS9400A FDS9435A_NF40 FDS9926A_NL FDS9934C_NL FDS9958 NDS9407_F095 SI9933BDY FDS2582 FDS3512_NL FDS3601_NL FDS3682 FDS3890_NL FDS4410A_NL FDS4435_F095 FDS4470_NL FDS4501H_F065 FDS4885C_NL FDS4953_NL FDS5672 FDS5682 FDS6294_NL FDS6570A_NF40 FDS6575_NL FDS6670A_NF40 FDS6680A_NF40 FDS6688_F095 FDS6694_NL FDS6875_NL FDS6892AZ_NL FDS6894AZ_NL FDS6898AZ_NL FDS6898A_NL FDS6912A_NF40 FDS6961A FDS6961A_NF40 FDS6982AS_NL FDS8333C FDS8817NZ ...

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