NDS9948 Fairchild Semiconductor, NDS9948 Datasheet
NDS9948
Manufacturer Part Number
NDS9948
Description
MOSFET 2P-CH 60V 2.3A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.NDS9948.pdf
(6 pages)
Specifications of NDS9948
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 2.3A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
394pF @ 30V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.25Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS9948TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS9948
Manufacturer:
FSC
Quantity:
45 000
Company:
Part Number:
NDS9948
Manufacturer:
FAIRCHILD
Quantity:
477
Company:
Part Number:
NDS9948-NL
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
NDS9948-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
NDS9948
Dual 60V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
2010 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
P
D
DSS
GSS
J
D
, T
JA
JC
Power management
Load switch
Battery protection
Device Marking
STG
NDS9948
Semiconductor’s
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Pin 1
D
D2
D
D2
SO-8
advanced
D
D1
– Continuous
– Pulsed
NDS9948
D
Device
D1
Parameter
S2
S
PowerTrench
G2
S
S1
S
G1
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1c)
(Note 1)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
Features
–2.3 A, –60 V
Low gate charge (9nC typical)
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
Q1
Q2
R
R
Ratings
DS(ON)
DS(ON)
–2.3
–60
–10
135
1.6
1.0
0.9
78
40
20
2
= 250 m
= 500 m
January 2010
4
3
2
1
@ V
@ V
2500 units
GS
GS
Quantity
NDS9948 Rev B1(W)
= –10 V
= –4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
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NDS9948 Summary of contents
Page 1
... Reel Size 13’’ January 2010 R = 250 –10 V DS(ON 500 –4.5 V DS(ON Ratings Units – –2.3 A – 1.6 1.0 0.9 –55 to +175 C 78 C/W 135 C/W 40 C/W Tape width Quantity 12mm 2500 units NDS9948 Rev B1(W) ...
Page 2
... – 1.0 MHz V = – – – GEN V = – –2 – Min Typ Max Units 15 mJ –10 A –60 V –52 mV/ C –2 A –25 100 nA –100 nA –1 –1.5 – mV/ C 138 250 m 175 500 225 433 – 394 1.4 nC 1.7 nC NDS9948 Rev B1(W) ...
Page 3
... Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% (cont 25°C unless otherwise noted A Test Conditions –1.7 A (Note –2.3A /dt = 100A determined by the user's board design 125°C/W when mounted 0.02 in pad copper Min Typ Max Units –1.7 A –0.8 –1 135°C/W when mounted on a minimum pad. NDS9948 Rev B1(W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-3.5V GS -4.0V -4.5V -6.0V -10V DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD NDS9948 Rev B1( 1.2 ...
Page 5
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 135°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 135 C/W JA P(pk ( Duty Cycle 100 1000 NDS9948 Rev B1(W) 60 1000 ...
Page 6
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ ...