FDMC6890NZ Fairchild Semiconductor, FDMC6890NZ Datasheet - Page 7

• Manufacturer Part Number: FDMC6890NZ
• Description: MOSFET N-CH DUAL 20V 4A POWER33
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC6890NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 3.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 270pF @ 10V
• Power - Max: 1.92W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMC6890NZTR

FDMC6890NZ Rev.C
Typical Characteristics (Q2 N-Channel)
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.0
0.0
6
5
4
3
2
1
0
Figure 13. On Region Characteristics
8
6
4
2
0
Figure 15. Normalized On Resistance
-50
Figure 17. Transfer Characteristics
V
GS
V
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
I
D
-25
GS
= 4.5V
vs Junction Temperature
0.5
= 4A
V
V
= 4.5V
0.5
T
DS
GS
J
, JUNCTION TEMPERATURE
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
0
1.0
1.0
25
T
1.5
J
50
µ
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
s
= 150
V
1.5
GS
o
75
C
= 2.5V
2.0
T
100
J
V
2.0
GS
= -55
(
o
T
2.5
C
J
= 1.8V
)
= 25
125
o
C
µ
o
s
C
2.5
3.0
150
7
Figure 14. Normalized on-Resistance vS Drain
1E-3
0.01
0.1
200
160
120
10
3.0
2.5
2.0
1.5
1.0
0.5
20
80
40
1
Figure 16. On-Resistance vs Gate to
0.2
Forward Voltage vs Source Current
0
2
Figure 18. Source to Drain Diode
V
V
GS
T
SD
Current and Gate Voltage
V
J
GS
V
= 0V
= 150
, BODY DIODE FORWARD VOLTAGE (V)
GS
2
0.4
= 1.8V
, GATE TO SOURCE VOLTAGE (V)
I
o
D
Source Voltage
C
, DRAIN CURRENT(A)
3
T
I
J
D
= 25
4
= 4A
0.6
o
C
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
6
4
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
V
J
T
GS
0.8
J
= -55
T
= 4.5V
= 25
J
V
= 150
8
GS
o
o
C
C
= 2.5V
o
5
www.fairchildsemi.com
C
1.0
10
µ
s
µ
s
1.2
12
6