FDY2000PZ Fairchild Semiconductor, FDY2000PZ Datasheet
FDY2000PZ
Specifications of FDY2000PZ
Related parts for FDY2000PZ
FDY2000PZ Summary of contents
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... Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device A FDY2000PZ ©2006 Fairchild Semiconductor Corporation FDY2000PZ Rev A ® ® ® ® Features • – 350 mA, – – 2.5v. GS • ESD protection diode (note 3) • RoHS Compliant ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown DSS Voltage Breakdown Voltage Temperature ∆BV DSS Coefficient ∆ Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
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Typical Characteristics -4.5V -2. 0.8 -4.0V -3.0V 0.6 -2.0V 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0.35A -4.5V ...
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Typical Characteristics -0.35A - -10V 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 100ms 1s 10s ...
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Dimensional Outline and Pad Layout 1.70 1.50 6 1.20 BSC 1 (0.20) 0.20 BSC FDY200PZ Rev A 0.30 0.50 0.15 4 1.70 1.25 1.55 3 0.30 0.50 LAND PATTERN RECOMMENDATION 1.00 0.60 SEE DETAIL A 0.56 0.35 BSC 0.10 0.00 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...