FDZ1905PZ Fairchild Semiconductor, FDZ1905PZ Datasheet
FDZ1905PZ
Specifications of FDZ1905PZ
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FDZ1905PZ Summary of contents
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... Fairchild’s advanced 1.5V PowerTrench = –1A of the art “low pitch” WL-CSP packaging process, the S1S2 FDZ1905PZ minimizes both PCB space and r advanced WL-CSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low r ...
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... Pulse Test: Pulse Width < 300ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied. FDZ1905PZ Rev 25°C unless otherwise noted J Test Conditions V = – ...
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... Figure 3. Normalized On-Resistance vs Drain Current and Gate Voltage 1 -1A S1S2 V = -4.5V GS 1.4 1.2 1.0 0.8 0.6 -50 - JUNCTION TEMPERATURE ( , T J Figure 5. Normalized On Resistance vs Junction Temperature FDZ1905PZ Rev 25°C unless otherwise noted J = -1.8V = -1.5V µ -4. µ -1.8V G2S2 V = -2.5V G2S2 V = -4.5V G2S2 100 ...
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... THIS AREA IS LIMITED BY r S1S2(on) 0.01 0 SOURCE1 TO SOURCE2 VOLTAGE (V) S1S2 Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. FDZ1905PZ Rev 25°C unless otherwise noted - 1.5 2.0 2.5 10 100us 10 1ms 10ms 10 100ms 1s 10s ...
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... FDZ1905PZ Rev.C 5 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDZ1905PZ Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...