FDS3601 Fairchild Semiconductor, FDS3601 Datasheet
FDS3601
Manufacturer Part Number
FDS3601
Description
MOSFET N-CH DUAL 100V 1.3A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS3601.pdf
(5 pages)
Specifications of FDS3601
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
480 mOhm @ 1.3A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 10V
Input Capacitance (ciss) @ Vds
153pF @ 50V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.48 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.6 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.3 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS3601
Manufacturer:
FSC
Quantity:
5 550
Company:
Part Number:
FDS3601
Manufacturer:
FSC
Quantity:
12 959
Company:
Part Number:
FDS3601AZ_NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
Company:
Part Number:
FDS3601_NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
FDS3601
100V Dual N-Channel PowerTrench MOSFET
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
DS(ON)
D
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
specifications. The result is a MOSFET that is
FDS3601
D2
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D2
D1
D1
S2
– Continuous
– Pulsed
FDS3601
Device
G2
Parameter
S1
G1
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
1.3 A, 100 V. R
Fast switching speed
Low gate charge (3.7nC typical)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
7
8
Tape width
R
DS(ON)
DS(ON)
–55 to +175
12mm
Q1
Q2
Ratings
100
1.3
1.6
1.0
0.9
78
40
20
6
2
= 480 m @ V
= 530 m @ V
4
3
2
1
August 2001
GS
GS
2500 units
= 10 V
= 6 V
Quantity
FDS3601 Rev C(W)
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS3601 Summary of contents
Page 1
... T =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ August 2001 = 480 DS(ON 530 DS(ON Ratings Units 100 1 1.6 1.0 0.9 –55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units FDS3601 Rev C(W) ...
Page 2
... Min Typ Max Units 26 mJ 1.3 A 100 V 105 mV 100 nA –100 –5 mV/ C 350 480 m 376 530 664 955 3 A 3.6 S 153 3 0 1.3 A 0.8 1 135°C/W when mounted on a minimum pad. FDS3601 Rev C(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 0. 125 5 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS3601 Rev C( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =135°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 135 °C/W JA P(pk ( Duty Cycle 100 FDS3601 Rev C(W) 50 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...