FDS4897AC Fairchild Semiconductor, FDS4897AC Datasheet
FDS4897AC
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FDS4897AC Summary of contents
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... Thermal Resistance, Junction to Ambient, θJC Package Marking and Ordering Information Device Marking Device FDS4897AC FDS4897AC ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C ® MOSFET General Description These dual N- and P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench = 6 that has been especially tailored to minimize on-state resistance = 5 ...
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... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted J Test Conditions = 250 µ -250 µ 250 µA, referenced to 25 °C ...
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... Q Reverse Recovery Charge rr Notes determined with the device mounted on a 1in θJA the user's board design. 2: Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. 3: Starting °C, N-ch mH ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted J Test Conditions 1 -1 ...
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... J Figure 3. Normalized On Resistance vs Junction Temperature 24 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted 3 µ 0.5 1.5 2 100 125 150 0 -55 C 0.01 J 0.001 ...
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... THIS AREA IS LIMITED BY r DS(on) 0.1 SINGLE PULSE T = MAX RATED 135 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted J 2000 1000 100 0 Figure 10. ...
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... Typical Characteristics (Q1 N-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 13. ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ Note RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 19. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted - µ -3 0.5 2.0 2.5 3.0 Figure 16. Normalized on-Resistance vs Drain 120 100 50 75 100 125 150 ...
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... THIS AREA IS 1 LIMITED BY r ds(on) SINGLE PULSE 0 MAX RATED 135 θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 25. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted - 125 100 100 C 100 200 8 2000 ...
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... Typical Characteristics (Q2 P-Channel DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 - Figure 27. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev °C unless otherwise noted J SINGLE PULSE 135 C/W θ Note RECTANGULAR PULSE DURATION (sec) ...
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... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDS4897AC Rev.C ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...