FDM3300NZ Fairchild Semiconductor, FDM3300NZ Datasheet
FDM3300NZ
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FDM3300NZ Summary of contents
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... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device 3300N FDM3300NZ ©2006 Fairchild Semiconductor Corporation FDM3300NZ Rev.F General Description = 10A This dual N-Channel MOSFET has been designed using D Fairchild Semiconductor's advanced PowerTrench = 9A D optimize the r with all the drains on one side of the package. ...
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... PCB. θJA (b)R = 135°C/W when mounted on a minimum pad copper. θJA 2: Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. FDM3300NZ Rev 25°C unless otherwise noted J Test Conditions I = 250μA, V ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 40 PULSE DURATION = 300 DUTY CYCLE = 2.0%MAX 125 0.0 0.5 1.0 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDM3300NZ Rev 25°C unless otherwise noted 2.0V GS μ s 1.5 2 100 125 150 ( μ ...
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... Figure 9. Forward Bias Safe Operating Area 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 135 C/W θ FDM3300NZ Rev 25°C unless otherwise noted J 3000 = 5V 1000 V = 10V 15V DD 100 500 100 100us 1ms 10ms 10 100ms ...
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... FDM3300NZ Rev.F 5 www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDM3300NZ Rev. F OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...