FDMC8200 Fairchild Semiconductor, FDMC8200 Datasheet
FDMC8200
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... Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device FDMC8200 FDMC8200 ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev.A1 ® MOSFET General Description This device includes two specialized N-Channel MOSFETs in a dual Power33 (3mm x 3mm MLP) package. The switch node = ...
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... Fall Time f Q Total Gate Charge g(TOT) Q Total Gate Charge g(TOT) Q Gate to Source Charge gs Q Gate to Drain “Miller” Charge gd ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted J Test Conditions = 250 µ 250 µ 250 µA, referenced to 25 °C ...
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... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied. ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted J Test Conditions ...
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... Figure 3. Normalized On Resistance vs Junction Temperature 40 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted µ s 2.0 2.5 3.0 100 100 125 150 ...
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... T = MAX RATED J 0. 180 C/W θ 0.001 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 300 100 ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted J 1000 100 100 100 100200 25 Figure 10 PULSE WIDTH (s) Figure 11. Single Pulse Maximum Power Dissipation ...
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... Typical Characteristics (Q1 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 R θ JA 0.003 - Figure 12. ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted 180 C RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... Junction Temperature 40 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 17. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted J µ s 2.0 2.5 3.0 Figure 14. Normalized on-Resistance vs Drain 100 125 150 0 ...
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... C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 21. Forward Bias Safe Operating Area 1000 100 Figure 22. Single Pulse Maximum Power Dissipation ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted J 2000 1000 100 0.1 50 100 100 100200 25 Figure 22 ...
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... Typical Characteristics (Q2 N-Channel) 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE R θ JA 0.001 - Figure 23. Junction-to-Ambient Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev. °C unless otherwise noted 145 C RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...
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... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev.A1 10 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMC8200 Rev.A1 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...