FDR8508P Fairchild Semiconductor, FDR8508P Datasheet - Page 69

• Manufacturer Part Number: FDR8508P
• Description: MOSFET P-CH 30V 3A SSOT-8
• Manufacturer: Fairchild Semiconductor

Specifications of FDR8508P

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 750pF @ 15V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 8-SSOT, SuperSOT-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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TO-220F (Continued)
FQPF15P12
FQPF22P10
FQPF17P10
SFS9540
FQPF12P10
FQPF8P10
SFS9520
FQPF5P10
SFS9510
FQPF47P06
FQPF27P06
FQPF17P06
SFS9Z34
FQPF11P06
SFS9Z24
SFS2955
FQPF7P06
SFS9Z14
Products
Min. (V)
BV
-120
-100
-100
-100
-100
-100
-100
-100
-100
-60
-60
-60
-60
-60
-60
-60
-60
-60
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.125
0.026
0.175
10V
0.19
0.29
0.53
1.05
0.07
0.12
0.14
0.28
0.41
0.2
0.2
0.6
1.2
0.3
0.5
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-64
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.3
6.3
29
40
30
43
21
12
16
84
33
21
30
13
15
15
9
9
=5V
I
D
13.2
10.5
10.7
8.2
5.3
4.6
2.9
2.5
8.6
7.5
7.3
5.3
5.3
15
30
17
12
12
(A)
MOSFETs
P
D
41
41
53
38
28
29
16
62
47
39
36
30
29
29
24
24
45
23
(W)