FDY2001PZ Fairchild Semiconductor, FDY2001PZ Datasheet

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FDY2001PZ

Manufacturer Part Number
FDY2001PZ
Description
MSOFET P-CH DUAL 20V SOT-563F
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDY2001PZ

Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 150mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 4.5V
Input Capacitance (ciss) @ Vds
100pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FDY2001PZ
Dual P-Channel (– 2.5V) Specified PowerTrench
General Description
This Dual P-Channel MOSFET has been designed
using Fairchild Semiconductor’s advanced Power
Trench process to optimize the R
Applications
• Li-Ion Battery Pack
©2006 Fairchild Semiconductor Corporation
FDY2001PZ Rev A
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
1
J
DSS
GSS
D
θJA
θJA
, T
Device Marking
STG
2
B
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (Steady State)
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
3
– Continuous
– Pulsed
FDY2001PZ
DS(ON)
Parameter
6
Device
@ V
5
GS
= – 2.5v.
T
4
A
=25
Reel Size
o
C unless otherwise noted
7 ’’
(Note 1a) 1a)
(Note 1a) 1a)
(Note 1b) 1
(Note 1a) 1a)
(Note 1b) 1
Features
• – 150 mA, – 20 V R
• ESD protection diode (note 3)
• RoHS Compliant
S
G
® ® ® ®
D
1
1
2
MOSFET
Tape width
–55 to +150
1
2
3
Ratings
8 mm
– 1000
– 150
– 20
625
446
200
280
± 8
R
DS(ON)
DS(ON)
= 8 Ω @ V
= 12Ω @ V
January 2006
GS
GS
www.fairchildsemi.com
= – 2.5 V
= – 4.5 V
3000units
5
6
4
Quantity
Units
°C/W
D
mW
G
S
mA
°C
V
V
1
2
2

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FDY2001PZ Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device B FDY2001PZ ©2006 Fairchild Semiconductor Corporation FDY2001PZ Rev A ® ® ® ® Features • – 150 mA, – – 2.5v. GS • ESD protection diode (note 3) • RoHS Compliant ...

Page 2

... Diode Reverse Recovery Charge rr Notes the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of θJA the drain pins guaranteed by design while R θJC a) FDY2001PZ Rev 25°C unless otherwise noted A Test Conditions = – 250 µ ...

Page 3

... Figure 3. On-Resistance Variation with Temperature -5V DS 0.8 0.6 0 125 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDY2001PZ Rev =-1.5V GS 4.2 3.4 2.6 -1.8V -1.8V 1.8 1 -1.5V 0.2 0 1.5 2 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.25 1.75 1.25 0.75 T ...

Page 4

... SINGLE PULSE 0.01 0.0001 0.001 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY2001PZ Rev A 150 125 -15V 100 rss 0 2 2.5 0 Figure 8 ...

Page 5

... Dimensional Outline and Pad Layout 1.70 1.50 6 1.20 BSC 1 (0.20) 0.20 BSC FDY2001PZ Rev A 0.30 0.50 0.15 4 1.70 1.25 1.55 3 0.30 0.50 LAND PATTERN RECOMMENDATION 1.00 0.60 SEE DETAIL A 0.56 0.35 BSC 0.10 0.00 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...

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