NDS0610 Fairchild Semiconductor, NDS0610 Datasheet - Page 4

• Manufacturer Part Number: NDS0610
• Description: MOSFET P-CH 60V 120MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of NDS0610

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 120mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 79pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 10 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.12 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS0610TR

Typical Characteristics
0.001
0.01
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
1
0.001
I
0.01
D
SINGLE PULSE
R
0.1
R
= -0.5A
0.0001
DS(ON)
V
JA
1
T
GS
A
= 350
= 25
= -10V
LIMIT
0.4
o
o
C
C/W
D = 0.5
-V
0.2
0.1
0.05
DS
0.02
0.01
, DRAIN-SOURCE VOLTAGE (V)
Q
SINGLE PULSE
g
, GATE CHARGE (nC)
0.8
0.001
DC
10
V
10s
DS
Figure 11. Transient Thermal Response Curve.
= -12V
1.2
1s
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
100ms
10ms
-48V
0.01
1.6
1ms
100us
-24V
100
2
0.1
t
1
, TIME (sec)
100
80
60
40
20
0
5
4
3
2
1
0
0.01
0
Figure 8. Capacitance Characteristics.
C
Figure 10. Single Pulse Maximum
1
RSS
10
C
-V
OSS
0.1
DS
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
20
10
t
1
C
, TIME (sec)
ISS
30
1
P(pk)
Duty Cycle, D = t
T
R
J
R
- T
JA
JA
40
(t) = r(t) * R
100
A
= 350
t
1
= P * R
SINGLE PULSE
R
t
2
10
JA
T
A
= 350°C/W
f = 1 MHz
V
o
= 25°C
GS
C/W
50
NDS0610 Rev B(W)
JA
= 0 V
1
JA
(t)
/ t
2
1000
100
60