FDN361BN Fairchild Semiconductor, FDN361BN Datasheet - Page 2
FDN361BN
Manufacturer Part Number
FDN361BN
Description
MOSFET N-CH 30V 1.4A SSOT3
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDN361BN.pdf
(5 pages)
Specifications of FDN361BN
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
193pF @ 15V
Power - Max
460mW
Mounting Type
Surface Mount
Package / Case
3-SSOT, SuperSOT-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.4 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDN361BNTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDN361BN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Change To
Pg. 2