FDC855N Fairchild Semiconductor, FDC855N Datasheet
FDC855N
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FDC855N Summary of contents
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... Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device .855 FDC855N ©2008 Fairchild Semiconductor Corporation FDC855N Rev.C ® MOSFET General Description = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for D low voltage and battery powered applications. Utilizing Fairchild = 5.3A Semiconductor’ ...
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... R is guaranteed by design while R is determined by the user’s board design. θJC θCA 2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDC855N Rev 25°C unless otherwise noted J Test Conditions I = 250µ ...
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... Figure 3. Normalized On- Resistance vs Junction Temperature 20 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 10V 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDC855N Rev 25°C unless otherwise noted 4. 3.5V GS µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 0.01 o ...
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... DRAIN to SOURCE VOLTAGE (V) DS Figure 9. Forward Bias Safe Operating Area 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE R 0. ©2008 Fairchild Semiconductor Corporation FDC855N Rev 25°C unless otherwise noted J 1000 V = 15V DD = 20V 100 0µ 1ms 10ms 100ms 1s o C/W ...
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... Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDC855N Rev.C 5 www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDC855N Rev.C FPS™ PDP-SPM™ ® ® FRFET Power220 SM Global Power Resource POWEREDGE Green FPS™ Power-SPM™ ...