FDMC4435BZ Fairchild Semiconductor, FDMC4435BZ Datasheet

MOSFET P-CH 30V 8.5A POWER33

FDMC4435BZ

Manufacturer Part Number
FDMC4435BZ
Description
MOSFET P-CH 30V 8.5A POWER33
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMC4435BZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
2045pF @ 15V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single Quad Drain Triple Source
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.02 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
8.5 A
Power Dissipation
2300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMC4435BZTR

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Part Number:
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Manufacturer:
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Quantity:
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©2010 Fairchild Semiconductor Corporation
FDMC4435BZ Rev.D2
FDMC4435BZ
P-Channel Power Trench
-30 V, -18 A, 20 m:
Features
„ Max r
„ Max r
„ Extended V
„ High performance trench technology for extremely low r
„ High power and current handling capability
„ HBM ESD protection level >7 kV typical (Note 4)
„ 100% UIL Tested
„ Termination is Lead-free and RoHS Compliant
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
DS
GS
AS
D
J
TJC
TJA
, T
Symbol
Device Marking
STG
FDMC4435BZ
DS(on)
DS(on)
GSS
= 20 m: at V
= 37 m: at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
range (-25 V) for battery applications
Top
GS
GS
= -10 V, I
= -4.5 V, I
FDMC4435BZ
-Continuous
MLP 3.3x3.3
-Continuous (Silicon limited)
-Pulsed
Device
D
D
= -8.5 A
= -6.3 A
Pin 1
T
A
®
= 25 °C unless otherwise noted
MOSFET
S
Parameter
S
S
MLP 3.3X3.3
DS(on)
G
Package
Bottom
1
T
T
T
T
T
General Description
This P-Channel MOSFET is produced
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
„ High side in DC - DC Buck Converters
„ Notebook battery power management
„ Load switch in Notebook
D
A
C
C
A
C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
D
= 25 °C
D
D
Reel Size
13 ’’
(Note 1a)
(Note 1a)
(Note 1a)
D
D
D
D
(Note 3)
8
6
7
5
Tape Width
12 mm
-55 to +150
Ratings
-8.5
±25
-30
-18
-32
-50
2.3
53
24
31
4
®
process that has
September 2010
using
www.fairchildsemi.com
3000 units
Quantity
4
3
1
2
Fairchild
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMC4435BZ

FDMC4435BZ Summary of contents

Page 1

... TJC R Thermal Resistance, Junction to Ambient TJA Package Marking and Ordering Information Device Marking Device FDMC4435BZ FDMC4435BZ ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev.D2 ® MOSFET General Description = -8.5 A This P-Channel MOSFET is produced D Semiconductor’s advanced Power Trench = -6 been especially tailored to minimize the on-state resistance. This ...

Page 2

... Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2 based on starting ° mH The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied. ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev. °C unless otherwise noted J Test Conditions = -250 PA ...

Page 3

... J Figure 3. Normalized On- Resistance vs Junction Temperature 50 P PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX - 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev. 25°C unless otherwise noted J 4 -4.5V 3 -5V 3.0 = -10V 2 -4V GS 2.0 1 -3. 100 125 150 ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C 0.01 0.01 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev. 25°C unless otherwise noted J 10000 1000 V = -15V DD = -20V 100 100us 1ms 10ms 100ms 1s ...

Page 5

... Figure 13. 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 0. ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev. 25°C unless otherwise noted -10V PULSE WIDTH (sec) Single Pulse Maximum Power Dissipation SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve ...

Page 6

... Dimensional Outline and Pad Layout ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev.D2 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMC4435BZ Rev.D2 Power-SPM™ ® ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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