FDS5351 Fairchild Semiconductor, FDS5351 Datasheet
FDS5351
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FDS5351 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDS5351 FDS5351 ©2008 Fairchild Semiconductor Corporation FDS5351 Rev.C ® MOSFET General Description = 6.1A This N-Channel D Semiconductor‘s advanced Power Trench = 5.5A D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...
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... Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. UIL condition: Starting T = 25° 3mH ©2008 Fairchild Semiconductor Corporation FDS5351 Rev 25°C unless otherwise noted J Test Conditions I = 250µ ...
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... Figure 3. Normalized On- Resistance vs Junction Temperature 30 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 125 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2008 Fairchild Semiconductor Corporation FDS5351 Rev 25°C unless otherwise noted µ PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 100 125 150 0. - ...
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... LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2008 Fairchild Semiconductor Corporation FDS5351 Rev 25°C unless otherwise noted J 4000 1000 V = 40V DD 100 1000 100 1ms 10ms 100ms 1s ...
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... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE R 0.001 - ©2008 Fairchild Semiconductor Corporation FDS5351 Rev 25°C unless otherwise noted 125 C/W θ RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve NOTES: DUTY FACTOR ...
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... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDS5351 Rev.C FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...