FDMA430NZ Fairchild Semiconductor, FDMA430NZ Datasheet - Page 3

• Manufacturer Part Number: FDMA430NZ
• Description: MOSFET N-CH 30V 5A MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMA430NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 2.4W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, 6-MicroFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMA430NZTR

FDMA430NZ Rev B4
Typical Characteristics
Figure 3. Normalized
40
30
20
10
30
25
20
15
10
0
5
0
Figure 1.
1.6
1.4
1.2
1.0
0.8
0.6
0.5
-80
0
Figure 5.
V
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
GS
I
V
V
V
D
GS
= 4.5V
GS
DS
= 5.0A
V
-40
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE(V)
= 4.5V
T
DS
J
,JUNCTION TEMPERATURE
= 5V
On Region Characteristics
1.0
T
1
Transfer Characteristics
J
Temperature
V
= 125
GS
0
= 3.0V
On Resistance vs Junction
o
C
1.5
40
2
PULSE DURATION=300
DUTY CYCLE=2.0% MAX
P
s
T
V
T
V
J
V
GS
J
GS
GS
80
=
= 25°C unless otherwise noted
= 1.5V
-55
= 2.5V
(
= 2.0V
T
O
2.0
C
J
3
o
)
= 25
C
120
o
C
P
S
2.5
160
4
3
Figure 2.
Figure 4.
Figure 6.
1E-3
1E-4
0.01
100
0.1
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
10
0.08
0.07
0.06
0.05
0.04
0.03
0.02
1
0.0
5
1
V
T
Voltage vs Source Current
On-Resistance vs Drain Current and
SD
V
V
J
GS
On-Resistance vs Gate to Source
, BODY DIODE FORWAD VOLTAGE(V)
GS
= 125
10
0.2
Source to Drain Diode Forward
T
, GATE TO SOURCE VOLTAGE (V)
J
=
= 25
0V
o
C
Gate Voltage
V
I
2
D
15
GS
o
, DRAIN CURRENT(A)
C
0.4
= 2.0V
Votlage
T
20
J
PULSE DURATION = 300
DUTY CYCLE = 2.0% MAX
= 125
0.6
3
3.5V
2.5V
25
o
C
T
J
T
= 25
J
0.8
= -55
3.0V
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30
o
I
C
D
o
= 2.5A
4
C
1.0
35
4.5V
P
s
1.2
40
5