FDD5614P Fairchild Semiconductor, FDD5614P Datasheet
FDD5614P
Specifications of FDD5614P
Available stocks
Related parts for FDD5614P
FDD5614P Summary of contents
Page 1
... Reel Size 13’’ May 2005 = 100 mΩ –10 V DS(ON 130 mΩ –4.5 V DS(ON Ratings Units –60 V ±20 V – – 3.8 1.6 °C – +175 °C/W 3.5 °C/W 40 °C/W 96 Tape width Quantity 12mm 2500 units FDD5614P Rev C1(W) ...
Page 2
... V = – GEN V = –30V –4 – –3.2 A (Note Min Typ Max Units 90 mJ –4.5 A –60 V –49 mV/°C µA –1 100 nA –100 nA –1 –1.6 – mV/°C 76 mΩ 100 99 130 137 185 – 759 2.5 nC 3.0 nC –3.2 A –0.8 –1.2 V FDD5614P Rev C1(W) ...
Page 3
... Maximum current is calculated as where P is maximum power dissipation 25°C and determined by the user's board design. θCA = 40°C/W when mounted on a θJA 2 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max 96°C/W when mounted θ minimum pad. FDD5614P Rev C1(W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature -3.5V GS -4.0V -4.5V -5.0V -6.0V -10V DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD5614P Rev C1( 1.4 ...
Page 5
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 96°C/W θJA P( (t) θ Duty Cycle 100 1000 FDD5614P Rev C1(W) 60 1000 ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...