FDC365P Fairchild Semiconductor, FDC365P Datasheet - Page 3

• Manufacturer Part Number: FDC365P
• Description: MOSFET P-CH 35V 4.3A 6-SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC365P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 55 mOhm @ 4.2A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 705pF @ 20V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.055 Ohm @ 10 V
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.3 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC365PTR

Device #1 FAN2558SX
Package:
#Leads:
Precondition Description:
Stress
PCNL1A
Environment Stress Detail:
Stress
ACLV
SOPL1
THBT
TMCL1
Device #2 FDC365P
Package:
#Leads:
Precondition Description:
P/C
X
X
X
TTG23
006
TTK23
C06
P/C
Standard
JESD22-A102 100%RH, 121C 96
JESD22-A108 NA%RH, 150C
JESD22-A101 85%RH, 85C, 5V 168
JESD22-A104 -65C, 150C
Standard
JESD22-A113
Qualification Stress Test and Sample Size Detail
Conditions
Conditions
Readpoints
TP1
168
100
TP2
500
500
500
TP3
1000
1000
Read-
points
Read-
points
Samples
A
77
77
77
77
Sample
Sample
A
0
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