FDD4685 Fairchild Semiconductor, FDD4685 Datasheet - Page 4

• Manufacturer Part Number: FDD4685
• Description: MOSFET P-CH 40V 8.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD4685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2380pF @ 20V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.4 A
• Power Dissipation: 69000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD4685TR

FDD4685 Rev.B
Typical Characteristics
100
200
0.1
10
10
10
9
8
7
6
5
4
3
2
1
1
Figure 7.
0.01
8
6
4
2
0
1
0
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
Figure 9.
Figure 11. Forward Bias Safe
-V DS , DRAIN to SOURCE VOLTAGE (V)
Switching Capability
Gate Charge Characteristics
t
0.1
AV
DS(on)
10
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE(ms)
Q
g
, GATE CHARGE(nC)
V
DD
SINGLE PULSE
T J = MAX RATED
T C = 25
T
J
= 125
= -10V
10
1
20
O
C
o
T
V
C
J
DD
= 25°C unless otherwise noted
= -30V
T
10
J
30
= 25
V
DD
o
10ms
1ms
DC
= -20V
100us
C
100
100
40
4
300
250
200
150
100
50
40
30
20
10
10
10
10
10
50
0
0.1
Figure 10.
10
25
4
3
2
1
Limited by Package
-3
Figure 12.
R
Figure 8.
θ
f = 1MHz
V
JC
Current vs Case Temperature
GS
-V
= 1.8
= 0V
DS
50
V
SINGLE PULSE
T
o
, DRAIN TO SOURCE VOLTAGE (V)
GS
10
Power Dissipation
Maximum Continuous Drain
C/W
C
to Source Voltage
, CASE TEMPERATURE
= -10V
-2
t, PULSE WIDTH (s)
Capacitance vs Drain
Single Pulse Maximum
1
75
10
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
-1
V
V
I = I
GS
GS
100
25
= -10V
= -4.5V
o
C
C
C
C DERATE PEAK
150 T
---------------------- -
10
(
iss
oss
rss
10
o
125
C
125
0
–
)
www.fairchildsemi.com
c
T
c
= 25
o
C
150
10
50
1