FDS4465 Fairchild Semiconductor, FDS4465 Datasheet

FDS4465

Manufacturer Part Number

FDS4465

Description

MOSFET P-CH 20V 13.5A 8-SOIC

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDS4465.pdf (5 pages)

Specifications of FDS4465

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8.5 mOhm @ 13.5A, 4.5V

Drain To Source Voltage (vdss)

20V

Current - Continuous Drain (id) @ 25° C

13.5A

Vgs(th) (max) @ Id

1.5V @ 250µA

Gate Charge (qg) @ Vgs

120nC @ 4.5V

Input Capacitance (ciss) @ Vds

8237pF @ 10V

Power - Max

1.2W

Mounting Type

Surface Mount

Package / Case

8-SOIC (3.9mm Width)

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0085 Ohm @ 4.5 V

Forward Transconductance Gfs (max / Min)

70 S

Drain-source Breakdown Voltage

20 V

Gate-source Breakdown Voltage

+/- 8 V

Continuous Drain Current

13.5 A

Power Dissipation

2500 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

09+

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDS4465TR

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Final PCN Q3073705 is an addendum for Final PCN Q1070805.

This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Kalabkova, Ivana

E-mail: Ivana.Kalabkova@notes.fairchildsemi.com

Phone: 408-822-2187

Implementation of change:

Expected 1st Device Shipment Date: 2007/12/10

Earliest Year/Work Week of Changed Product: 0750

Change Type Description: Bond Wire Material Composition

Description of Change (From): Wirebond material using 2mil Gold (Au) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Description of Change (To): Wirebond material using 2mil Copper (Cu) wire for SO8 devices

manufactured in subcontractor site, GEM Electronics Ltd Shanghai China.

Reason for Change : Qualification of GEM as alternate site for Cu wire bonded parts for SO-8.

Products will be shipped for an interim period of time with Au wire until the inventory is

depleted and then converted to Cu wire. GEM Electronics Ltd., Shanghai China is TS-16949

certified.

Qual/REL Plan Numbers : Q20070231

Qualification :

This change will have no impact on any of the electrical parameters of the products

involved. The product test conditions, test limits and performance will remain

unchanged. Products will be built with the same level of quality and reliability as with

the existing products. The devices for qualification and qualification requirements are

defined in the table below.

Results/Discussion

Test: (Autoclave)

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: Rivero, Douglas

E-mail: Doug.Rivero@fairchildsemi.com

Phone: 1-408-822-2143

Date Issued On : 2007/10/12

Date Created : 2007/09/11

PCN# : Q3073705

Pg. 1

Related parts for FDS4465

FDS4465 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Lot Device Q20070231AAACLV FDS6912A Q20070231BAACLV FDS3570 Q20070231CAACLV FDS3672 Q20070231DAACLV FDS8870 Test: (High Temperature Gate Bias) Lot Device Q20070231AAHTGB FDS6912A Q20070231BAHTGB FDS3570 Q20070231CAHTGB FDS3672 Q20070231DAHTGB FDS8870 Test: (High Temperature Reverse Bias) Lot Device Q20070231AAHTRB FDS6912A Q20070231BAHTRB FDS3570 Q20070231CAHTRB FDS3672 Q20070231DAHTRB FDS8870 ...

Page 3

... Product Id Description : This change affects certain SO-8 products currently assembled in our Pg. 2 subcontractor site, GEM Electronics Ltd. The products affected by this change are listed below in the "Affected FSIDs" section. Affected FSIDs : FDS2572 FDS2582_NL FDS3590_F095 FDS3672 FDS3692 FDS3912_NL FDS4410_NL FDS4465_F095 FDS4480_NF40 FDS4501H_NL FDS4935A_NF40 FDS5670_NF40 FDS5680_NF40 FDS5690_F095 FDS6298 FDS6574A_NL FDS6576_NL FDS6672A_NL ...

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