RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet - Page 8

• Manufacturer Part Number: RFD3055LE
• Description: MOSFET N-CH 60V 11A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD3055LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 107 mOhm @ 8A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.107 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.107Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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