FDMS6681Z Fairchild Semiconductor, FDMS6681Z Datasheet

FDMS6681Z

Manufacturer Part Number

FDMS6681Z

Description

MOSFET P-CH 30V 21.1A POWER56

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDMS6681Z.pdf (7 pages)

Specifications of FDMS6681Z

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.2 mOhm @ 22.1A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

21.1A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

241nC @ 10V

Input Capacitance (ciss) @ Vds

10380pF @ 15V

Power - Max

2.5W

Mounting Type

Surface Mount

Package / Case

8-PQFN, Power56

Configuration

Single Quad Drain Triple Source

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.0035 Ohms

Drain-source Breakdown Voltage

- 30 V

Gate-source Breakdown Voltage

+/- 25 V

Continuous Drain Current

21.1 A

Power Dissipation

2.5 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

FDMS6681ZTR

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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: Kalabkova, Ivana

E-mail: Ivana.Kalabkova@notes.fairchildsemi.com

Phone: 408-822-2187

Implementation of change:

Expected 1st Device Shipment Date: 2009/07/13

Earliest Year/Work Week of Changed Product: 0929

Change Type Description: Assembly Process, Lead Finish Composition, Package Change (Lead

Frame), Package External Dimension

Description of Change (From): Selected MOSFET products assembled in Power 56 package, in

which the current Die Attach Pad & Leadpost plating is NiPdAu; current Gate Leadpost Plating

is NiPdAu; current Gate Interconnect is 5mil Al wire; current Singulation Method is

Saw-Singulation and current Plating Finish is NiPdAu. To view "From/To" Dimensional

Outline, please refer to the attached table "Dimensional Outline."

Description of Change (To): The alternate Die Attach Pad & Leadpost plating will be Bare Cu;

alternate Gate Leadpost Plating will be Ag; alternate Gate Interconnect will be 2mil Cu wire;

alternate Singulation Method will be Punch-singulation and the alternate Plating Finish will be

Pure Sn.

Reason for Change : In addition to the current qualified Saw-singulated Power 56 package,

Fairchild Semiconductor intends to qualify the Punch-singulated Power 56 to support volume

ramp. There will be no change to the part number as the Punch and Saw-singulated Power 56

share common land pattern dimensions and are interchangeable

Change From

Change To

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: Rivero, Douglas

E-mail: Doug.Rivero@notes.fairchildsemi.com

Phone: 1-408-822-2143

Date Issued On : 2009/04/14

Date Created : 2009/04/03

PCN# : Q2091404

Pg. 1

Related parts for FDMS6681Z

FDMS6681Z Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Qual/REL Plan Numbers : Q20090181 Qualification : This change will not affect the devices' specifications or functional performance. Product quality, reliability and MSL performance will be maintained. There will be no change to the part number as both the Punch ...

Page 3

... Q20090181CATMCL1 FDMS8670AS Q20090181CATMCL1 FDMS8670AS Test: (Unbiased HAST) | Conditions: 85%RH, 130C | Standard: JESD22-A118 Lot Device Q20090181AAUHAST1 FDMS8692 Q20090181BAUHAST1 FDMS8672AS Q20090181CAUHAST1 FDMS8670AS Product Id Description : Fairchild Semiconductor's selected MOSFET devices assembled in 100-HOURS 500-HOURS 1000 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 168-HOURS ...

Page 4

... Power 56 package will be affected by this change. Please refer to the Affected FSIDs section. Affected FSIDs : FDMS3500 FDMS6673BZ FDMS7670 FDMS86101 FDMS8670 FDMS8670S_SB82233 FDMS8674 FDMS8848NZ FDMS3662 FDMS6681Z FDMS7672 FDMS8660AS FDMS8670AS FDMS8672AS FDMS8680 FDMS8880 FDMS5352 FDMS7660 FDMS8460 FDMS8662 FDMS8670S FDMS8672S FDMS8692 Pg. 4 ...

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