FDB5800 Fairchild Semiconductor, FDB5800 Datasheet

MOSFET N-CH 60V 80A D2PAK

FDB5800

Manufacturer Part Number
FDB5800
Description
MOSFET N-CH 60V 80A D2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDB5800

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
135nC @ 10V
Input Capacitance (ciss) @ Vds
6625pF @ 15V
Power - Max
242W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.6 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
242000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
12.6Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB5800TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB5800
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDB5800
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2010 Fairchild Semiconductor Corporation
FDB5800 Rev. A1
FDB5800
N-Channel Logic Level PowerTrench
60V, 80A, 7mΩ
Features
r
High performance trench technology for extermely low
Rdson
Low Gate Charge
High power and current handling capability
RoHS Compliant
DS(ON)
= 5.5mΩ (Typ.), V
GATE
SOURCE
FDB SERIES
GS
TO-263AB
= 5V, I
D
= 80A
(FLANGE)
DRAIN
1
Applications
DC-DC Converters and Off-Line UPS
G
®
D
S
MOSFET
April 2010
www.fairchildsemi.com

Related parts for FDB5800

FDB5800 Summary of contents

Page 1

... High performance trench technology for extermely low Rdson Low Gate Charge High power and current handling capability RoHS Compliant GATE SOURCE TO-263AB FDB SERIES ©2010 Fairchild Semiconductor Corporation FDB5800 Rev. A1 Applications = 80A DC-DC Converters and Off-Line UPS D DRAIN (FLANGE) 1 April 2010 ® ...

Page 2

... Q Total Gate Charge at 10V g(TOT) Q Total Gate Charge at 5V g(5) Q Threshold Gate Charge g(TH) Q Gate to Source Gate Charge gs Q Gate Charge Threshold to Plateau gs2 Q Gate to Drain “Miller” Charge gd FDB5800 Rev 25°C unless otherwise noted C Parameter 10V 5V 10V, with C/W) θJA ...

Page 3

... Fall Time f t Turn-Off Time OFF Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Starting T = 25° 1mH 36A Pulse width = 100s. FDB5800 Rev 5V 30V 80A 5V 2Ω 80A 40A 60A, dI /dt = 100A/µs ...

Page 4

... DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 3. 1000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 100 FDB5800 Rev 25°C unless otherwise noted C 140 120 100 150 175 125 Figure RECTANGULAR PULSE DURATION (s) Normalized Maximum Transient Thermal Impedance - PULSE WIDTH (s) Figure 4 ...

Page 5

... 0.006 0.004 0.002 GATE TO SOURCE VOLTAGE (V) GS Figure 9. On-Resistance Variation vs Gate-to- Source Voltage FDB5800 Rev 25°C unless otherwise noted C 500 10µs 100 100µs 1ms 10 10ms 100ms DC 1 0.01 100 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. 160 ...

Page 6

... Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 20000 10000 1000 f = 1MHz C RSS 100 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage FDB5800 Rev 25°C unless otherwise noted C 1 1.1 1.0 0.9 80 120 160 200 - Figure 12. Breakdown Voltage vs Junction Temperature 10 C ISS ...

Page 7

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ F-PFS™ Auto-SPM™ FRFET Build it Now™ Global Power Resource CorePLUS™ ...

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