FDA20N50F Fairchild Semiconductor, FDA20N50F Datasheet

MOSFET N-CH 500V 22A TO-3PN

FDA20N50F

Manufacturer Part Number
FDA20N50F
Description
MOSFET N-CH 500V 22A TO-3PN
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDA20N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3390pF @ 25V
Power - Max
388W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
388000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDA20N50F
Manufacturer:
FAIRCHILD
Quantity:
4 000
Part Number:
FDA20N50F
Manufacturer:
ON/安森美
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDA20N50F Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDA20N50F
N-Channel MOSFET
500V, 22A, 0.26Ω
Features
• R
• Low gate charge ( Typ. 50nC )
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.22Ω ( Typ.) @ V
( Typ. 27pF )
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-3PN
D
= 11A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
(T
- Derate above 25
- Pulsed
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Failchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These device are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Min.
0.24
-
-
-55 to +150
Ratings
1110
500
±30
388
300
3.1
4.5
S
22
13
88
39
D
22
Max.
0.44
UniFET
40
October 2007
-
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDA20N50F Summary of contents

Page 1

... R Thermal Resistance, Case to Sink θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDA20N50F Rev. A Description = 11A These N-Channel enhancement mode power field effect D transistors are produced using Failchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... Starting ≤ 22A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDA20N50F Rev. A Package Reel Size TO-3PN - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C iss = oss = rss = 4500 oss C 3000 iss 1500 C rss 0 0 Drain-Source Voltage [V] DS FDA20N50F Rev. A Figure 2. Transfer Characteristics 100 *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage V = 20V GS o *Note Figure 6. Gate Charge Characteristics ...

Page 4

... Figure 9. Maximum Drain Current vs. Case Temperature Case Temperature C 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDA20N50F Rev. A (Continued) Figure 8. Maximum Safe Operating Area *Notes 250 µ 100 150 200 100 125 150 Figure 10. Transient Thermal Response Curve ...

Page 5

... FDA20N50F Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDA20N50F Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDA20N50F Rev. A TO-3PN 7 www.fairchildsemi.com ...

Page 8

... Product Status Formative or In Advance Information Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDA20N50F Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

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