FDI025N06 Fairchild Semiconductor, FDI025N06 Datasheet

MOSFET N-CH 60V 265A TO-262

FDI025N06

Manufacturer Part Number
FDI025N06
Description
MOSFET N-CH 60V 265A TO-262
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDI025N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
265A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
226nC @ 10V
Input Capacitance (ciss) @ Vds
14885pF @ 25V
Power - Max
395W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0025 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
265 A
Power Dissipation
395 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDI025N06
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2008 Fairchild Semiconductor Corporation
FDI025N06 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*
V
V
I
I
E
dv/dt
P
T
T
R
R
R
D
DM
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
FDI025N06
N-Channel PowerTrench
60V, 265A, 2.5mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
DSS
GSS
AS
D
J
L
θJC
θCS
θJA
, T
Symbol
Symbol
DS(on)
STG
= 1.9mΩ ( Typ.) @ V
Peak Diode Recovery dv/dt
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
GS
D
= 10V, I
S
D
T
= 75A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
TO-262
FDI Series
®
C
o
C unless otherwise noted
= 25
MOSFET
o
C)
DS(on)
C
C
= 25
= 100
1
o
C
General Description
This
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
o
C)
o
C)
N-Channel
(Note 1)
(Note 2)
(Note 3)
G
MOSFET
S
D
is
-55 to +175
Ratings
Ratings
1060
2531
265*
190*
produced
±20
395
300
0.38
62.5
3.5
2.6
60
0.5
www.fairchildsemi.com
June 2008
using
Fairchild
Units
W/
Units
o
V/ns
mJ
C/W
o
o
W
V
A
A
V
A
C
C
o
C
tm

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FDI025N06 Summary of contents

Page 1

... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDI025N06 Rev. A ® MOSFET General Description = 75A This N-Channel D Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 75A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDI025N06 Rev unless otherwise noted C Package Reel Size TO-262 - Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 16000 C iss 12000 C iss = oss C oss = 8000 C rss = C gd 4000 C rss 0 0 Drain-Source Voltage [V] DS FDI025N06 Rev. A Figure 2. Transfer Characteristics 1000 100 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 V = 10V 20V ...

Page 4

... Limited by R DS(on) *Notes Single Pulse 0 Drain-Source Voltage [ 0.5 0.1 0.2 0.1 0.05 0.02 0.01 Single pulse 0.01 0.005 -5 10 FDI025N06 Rev. A (Continued) Figure 8. On-Resistance Variation *Notes 10mA D 50 100 150 200 Figure 10. Maximum Drain Current µ µ 100 s 1ms ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDI025N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDI025N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions FDI025N06 Rev. A Dimensions in Millimeters 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDI025N06 Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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