BSS83,215 NXP Semiconductors, BSS83,215 Datasheet - Page 3

• Manufacturer Part Number: BSS83,215
• Description: MOSFET N-CH 10V 50MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BSS83,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Mounting Type: Surface Mount
• Power - Max: 230mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1µA
• Current - Continuous Drain (id) @ 25° C: 50mA
• Drain To Source Voltage (vdss): 10V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 Ohm @ 100µA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1659-2; 933418060215; BSS83 T/R

NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Drain-source voltage
Source-drain voltage
Drain-substrate voltage
Source-substrate voltage
Drain current (DC)
Total power dissipation up to T
Storage temperature range
Junction temperature
From junction to ambient in free air
MOSFET N-channel enhancement switching transistor
amb
= 25 C
(1)
(1)
Rev. 03 - 21 November 2007
V
V
V
V
I
P
T
T
R
D
stg
j
DS
SD
DB
SB
tot
th j-a
=
max.
max.
max.
max.
max.
max.
max.
65 to
Product specification
230 mW
150
125
10 V
10 V
15 V
15 V
50 mA
430 K/W
C
C
BSS83
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