BSS83,215 NXP Semiconductors, BSS83,215 Datasheet - Page 5

• Manufacturer Part Number: BSS83,215
• Description: MOSFET N-CH 10V 50MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BSS83,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Mounting Type: Surface Mount
• Power - Max: 230mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1µA
• Current - Continuous Drain (id) @ 25° C: 50mA
• Drain To Source Voltage (vdss): 10V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 Ohm @ 100µA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1659-2; 933418060215; BSS83 T/R

NXP Semiconductors
Pulse generator:
handbook, halfpage
R
t
t
t
r
f
p
i
MOSFET N-channel enhancement switching transistor
V DD
T
j
V i
(mA)
= 25 C.
I D
60
40
20
=
=
0
0
50
50
V GS = 4.5 V
0,01
0,5 ns
1,0 ns
Fig.3 V
50
20 ns
630
T.U.T
0.1 F
handbook, full pagewidth
MBK297
SB
4
= 0; typical values.
Fig.2 Switching times test circuit and input and output waveforms.
V o
4 V
8
3.5 V
V DS (V)
3 V
MDA250
2.5 V
2 V
Rev. 03 - 21 November 2007
12
OUTPUT
INPUT
10%
90%
handbook, halfpage
t r
90%
T
j
(mA)
= 25 C.
I D
t on
1.2
0.8
0.4
0
0
10%
V GS = 10 V
Fig.4 V
SB
40
= 6,8 V; typical values.
5 V
4 V
90%
t f
3.2 V
80
10%
Product specification
V DSon (mV)
t off
3 V
2 V
MDA251
10%
BSS83
MBK296
120
5 of 9
90%