BSS83,215 NXP Semiconductors, BSS83,215 Datasheet - Page 6

• Manufacturer Part Number: BSS83,215
• Description: MOSFET N-CH 10V 50MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BSS83,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Mounting Type: Surface Mount
• Power - Max: 230mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1µA
• Current - Continuous Drain (id) @ 25° C: 50mA
• Drain To Source Voltage (vdss): 10V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 Ohm @ 100µA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1659-2; 933418060215; BSS83 T/R

NXP Semiconductors
handbook, halfpage
handbook, halfpage
MOSFET N-channel enhancement switching transistor
T
T
j
j
(mA)
(mA)
= 25 C.
= 25 C.
I D
I D
1.2
0.8
0.4
50
40
30
20
10
Fig.5 V
0
0
0
0
Fig.7 V
VGS =
10 V 5 V 4 V
DS
20
= 10 V; V
1
SB
40
= 0; typical values.
BS
2
3 V
= 0; typical values.
60
V DSon (mV)
3
80
V GS (V)
MDA252
MDA254
2 V
100
Rev. 03 - 21 November 2007
4
handbook, halfpage
T
j
(mA)
= 25 C.
I D
12
8
4
0
0
Fig.6 V
1
DS
V SB = 0 V
= V
2
GS
= V
4 V 12 V
GS(th)
Product specification
3
V GSth (V)
8 V
.
MDA253
BSS83
6 of 9
4