BSS83,215 NXP Semiconductors, BSS83,215 Datasheet - Page 7

• Manufacturer Part Number: BSS83,215
• Description: MOSFET N-CH 10V 50MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BSS83,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Mounting Type: Surface Mount
• Power - Max: 230mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1µA
• Current - Continuous Drain (id) @ 25° C: 50mA
• Drain To Source Voltage (vdss): 10V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 Ohm @ 100µA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1659-2; 933418060215; BSS83 T/R

NXP Semiconductors
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
MOSFET N-channel enhancement switching transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT143B
1.1
0.9
A
max
A 1
0.1
4
1
y
0.48
0.38
b p
b 1
IEC
0.88
0.78
b 1
D
e
0.15
0.09
e 1
c
JEDEC
3.0
2.8
D
REFERENCES
b p
0
Rev. 03 - 21 November 2007
1.4
1.2
E
3
2
1.9
w
e
B
scale
M
EIAJ
1
B
1.7
e 1
v
M
H E
2.5
2.1
2 mm
A
A
0.45
0.15
L p
A 1
0.55
0.45
Q
detail X
PROJECTION
0.2
EUROPEAN
v
H E
E
0.1
w
Q
Product specification
L p
0.1
y
A
ISSUE DATE
97-02-28
BSS83
c
SOT143B
7 of 9
X