BSS83,215 NXP Semiconductors, BSS83,215 Datasheet - Page 9

• Manufacturer Part Number: BSS83,215
• Description: MOSFET N-CH 10V 50MA SOT-143B
• Manufacturer: NXP Semiconductors

Specifications of BSS83,215

• Package / Case: SOT-143, SOT-143B, TO-253AA
• Transistor Type: N-Channel
• Voltage - Rated: 10V
• Current Rating: 50mA
• Mounting Type: Surface Mount
• Power - Max: 230mW
• Fet Type: MOSFET N-Channel, Metal Oxide
• Vgs(th) (max) @ Id: 2V @ 1µA
• Current - Continuous Drain (id) @ 25° C: 50mA
• Drain To Source Voltage (vdss): 10V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 Ohm @ 100µA, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 10 V
• Continuous Drain Current: 0.05 A
• Power Dissipation: 230 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1659-2; 933418060215; BSS83 T/R

NXP Semiconductors
Revision history
Revision history
Document ID
BSS83_N_3
Modifications:
BSS83_CNV_2
Release date
20071121
19910401
•
Page 2; column 2; Marking code; row 1 changed
Data sheet status
Product data sheet
Product specification
MOSFET N-channel enhancement switching transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
-
-
Supersedes
BSS83_CNV_2
-
Date of release: 21 November 2007
Document identifier: BSS83_N_3
All rights reserved.
BSS83