PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet
PSMN1R2-25YL,115
Specifications of PSMN1R2-25YL,115
934063812115
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PSMN1R2-25YL,115 Summary of contents
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... PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... Quick reference …continued Conditions 100 °C; see °C; see j Simplified outline 1 SOT1023 (LFPAK2) Rev. 01 — 25 June 2009 PSMN1R2-25YL Min Typ Max - - 1.6 Figure 11 - 0.9 1.2 Figure 10 Graphic symbol D G mbb076 Version SOT1023 © NXP B.V. 2009. All rights reserved. Unit mΩ ...
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... ° 100 j(init Ω; unclamped R GS 003aad139 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 25 June 2009 PSMN1R2-25YL Min Max - -20 20 [1] - 100 [1] - 100 Figure 3 - 815 - 121 -55 150 -55 150 - 260 [1] - 100 - 815 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN1R2-25YL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK / Conditions see Figure Rev. 01 — 25 June 2009 PSMN1R2-25YL 003aad199 10 us 100 100 (V) DS Min Typ Max - 0.4 1 003aad142 ...
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... see Figure 12; see Figure 4 see Figure 12; see Figure 4 see Figure 12; see Figure see Figure MHz °C; see Figure 14 j Rev. 01 — 25 June 2009 PSMN1R2-25YL Min Typ Max Unit 1.3 1.7 2. 1.5 µ 500 µ 100 100 nA - 1.2 1.85 mΩ ...
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... ° see Figure /dt = -100 A/µ 003aad128 12 R (on) DS (mΩ ° (V) GS Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 25 June 2009 PSMN1R2-25YL Min Typ Max Unit - 125 - 0.78 1 003aad140 (V) GS © NXP B.V. 2009. All rights reserved. ...
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... DS Fig 8. Sub-threshold drain current as a function of gate-source voltage 003a a c337 10 R DS(on) (mΩ 120 180 T (°C) j Fig 10. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 25 June 2009 PSMN1R2-25YL 003aab271 min typ max ( 003aad132 2.6 2.8 3 3 100 ...
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... Fig 12. Gate charge waveform definitions 120 180 ( ° 003aad134 (pF 12V 120 10 Q (nC) G Fig 14. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 01 — 25 June 2009 PSMN1R2-25YL GS(pl) V GS(th GS1 GS2 G(tot) 003aaa508 003aad135 C iss C oss C rss ...
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... Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN1R2-25YL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK 100 150 ° 0.2 0.4 0.6 0.8 Rev. 01 — 25 June 2009 PSMN1R2-25YL 003aad133 25 ° (V) SD © NXP B.V. 2009. All rights reserved ...
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... C detail X 0 2.5 scale (1) (1) (1) ( 0.25 0.30 4.70 4.45 5.30 3.7 1.27 0.19 0.24 4.45 4.95 3.5 References JEDEC JEITA Rev. 01 — 25 June 2009 PSMN1R2-25YL (3× θ θ ° 6.2 1.3 0.85 8 0.25 0.1 ° 5.9 0.8 0.40 0 European Issue date ...
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... Table 7. Revision history Document ID Release date PSMN1R2-25YL_1 20090625 PSMN1R2-25YL_1 Product data sheet N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Data sheet status Change notice Product data sheet - Rev. 01 — 25 June 2009 PSMN1R2-25YL Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 25 June 2009 PSMN1R2-25YL © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN1R2-25YL_1 All rights reserved. Date of release: 25 June 2009 ...