PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 5

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
6. Characteristics
Table 6.
PSMN1R2-25YL_1
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
DSS
GSS
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate resistance
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
f = 1 MHz
I
see
I
see
I
see
V
V
T
D
D
D
D
D
D
D
D
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
= 25 A; V
= 25 °C; see
Figure
Figure 9
Figure 9
Figure 10
Figure 11
Figure 11
Figure 10
Figure
Figure
Figure
= 25 V; V
= 25 V; V
= 12 V; see
= 12 V; V
= 16 V; V
= -16 V; V
= 4.5 V; I
= 10 V; I
= 10 V; I
= 10 V; I
8; see
12; see
12; see
12; see
DS
DS
DS
DS
DS
DS
Rev. 01 — 25 June 2009
D
D
D
D
GS
GS
GS
DS
GS
GS
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 12 V; V
= 12 V; V
= 12 V; V
= V
= V
= V
= 15 A; T
Figure 14
Figure 12
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= 0 V; T
= 0 V; T
= 0 V; T
Figure 9
GS
GS
GS
Figure 13
Figure 13
Figure 13
; T
; T
; T
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
j
j
j
j
j
j
GS
GS
GS
j
j
j
j
= 25 °C;
= 150 °C;
= -55 °C;
= 100 °C;
= 150 °C;
= 25 °C;
j
j
j
= 25 °C
= 150 °C
= 25 °C
= 25 °C;
= 25 °C
= -55 °C
= 25 °C
= 10 V;
= 4.5 V;
= 4.5 V;
PSMN1R2-25YL
Min
25
22
1.3
0.65
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.7
-
-
-
-
-
-
1.2
-
-
0.9
0.94
105
50.6
19.3
8.1
4.5
11.9
2.6
6380
1640
644
© NXP B.V. 2009. All rights reserved.
Max
-
-
2.15
-
2.45
1.5
500
100
100
1.85
1.6
2.1
1.2
-
-
-
-
-
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
nC
V
pF
pF
pF
5 of 13