PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 8

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
PSMN1R2-25YL_1
Product data sheet
Fig 11. Normalized drain-source on-state resistance
Fig 13. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
0
40
60
80
V
120
DS
Q
= 12V
G
003aad134
T
(nC)
j
( ° C)
03aa27
120
180
Rev. 01 — 25 June 2009
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Fig 12. Gate charge waveform definitions
Fig 14. Input, output and reverse transfer capacitances
(pF)
10
C
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
1
I
Q
PSMN1R2-25YL
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2009. All rights reserved.
V
DS
003aaa508
003aad135
(V)
C
C
C
oss
iss
rss
10
2
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