PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
7. Package outline
Fig 16. Package outline SOT1023
PSMN1R2-25YL_1
Product data sheet
Plastic single-ended surface-mounted package (LFPAK2); 4 leads
Dimensions
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
mm
Unit
SOT1023
Outline
version
max
nom
min
H
1.10
0.95
A
D
L
0.15
0.00
A
1
1
0.50
0.35
b
IEC
e
4.41
3.62
b
1
2
A
0.85
1
b
E
b
1
2
C
3
0.25
0.19
JEDEC
c
0.30
0.24
c
0
1
4
b
References
4.70
4.45
D
Rev. 01 — 25 June 2009
(1)
w
A
D
4.45 5.30
mounting
1
(1)
base
JEITA
A
detail X
4.95
scale
E
c
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
2.5
1
(1)
E
3.7
3.5
1
(1)
A
c
1.27
e
L
X
p
D
6.2
5.9
H
1
5 mm
1.3
0.8
L
0.85
0.40
y
L
PSMN1R2-25YL
p
C
θ
European
projection
0.25
w
(3×)
E
b
1
2
0.1
y
8
0
θ
°
°
© NXP B.V. 2009. All rights reserved.
Issue date
08-10-13
09-05-26
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