PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 4

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R2-25YL_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
I
D
10
10
10
10
10
10
(A)
10
10
10
-1
-1
-2
-3
-4
4
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.05
0.2
0.02
Thermal characteristics
0.1
single shot
Parameter
thermal resistance from
junction to mounting
base
10
Limit R
-5
dson
= V
DS
Conditions
see
10
/ I
D
-4
Figure 4
1
Rev. 01 — 25 June 2009
10
-3
DC
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
10
-2
10
10
-1
PSMN1R2-25YL
Min
-
V
DS
(V)
P
10 us
100 us
1 ms
10 ms
100 ms
1
Typ
0.4
t
p
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad199
003aad142
δ =
Max
1
T
t
p
t
10
10
2
Unit
K/W
4 of 13