PSMN1R2-25YL,115 NXP Semiconductors, PSMN1R2-25YL,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN1R2-25YL,115
• Description: MOSFET N-CH 25V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R2-25YL,115

• Package / Case: LFPAK (4 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 105nC @ 10V
• Input Capacitance (ciss) @ Vds: 6380pF @ 12V
• Power - Max: 121W
• Mounting Type: Surface Mount
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 mOhms
• Drain-source Breakdown Voltage: 25 V
• Continuous Drain Current: 100 A
• Power Dissipation: 121 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4909-2; 934063812115

NXP Semiconductors
PSMN1R2-25YL_1
Product data sheet
Fig 7.
Fig 9.
V
(A)
I
GS (th)
(V)
D
120
90
60
30
3
2
1
0
0
function of drain-source voltage; typical values
-60
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
10
3.5
V
GS
(V) = 3
0
1
max
min
typ
60
2
120
3
003aad131
003a a c337
T
V
j
DS
(°C)
2.8
2.6
2.4
2.2
(V)
180
4
Rev. 01 — 25 June 2009
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DS(on)
10
10
10
10
10
10
(A)
I
D
-1
-2
-3
-4
-5
-6
10
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
20
2.6
min
1
PSMN1R2-25YL
40
60
2.8
typ
2
V
GS
© NXP B.V. 2009. All rights reserved.
V
80
GS
(V) = 10
003aab271
003aad132
max
I
(V)
3.5
D
3
(A)
100
3
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