STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 10

• Manufacturer Part Number: STP2NK90Z
• Description: MOSFET N-CH 900V 2.1A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4378-5

Test circuit
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Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Test circuit for inductive load
resistive load
switching and diode recovery times
switching and diode recovery times
Test circuit
Figure 17. Gate charge test circuit
Figure 19. Unclamped Inductive load test
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
circuit